Method of manufacturing RF power amplifier module, RF power amplifier module, RF module, and base station
US9721902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Aug 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a radio frequency (RF) unit of a base station, and more particularly, to a method of manufacturing an RF power amplifier module, an RF power amplifier module, an RF module, and a base station. The RF power amplifier module includes at least a power device, a power circuit board, a heat-dissipation substrate, and input/output ports. A power device die of the power device and the power circuit board are mounted on the heat-dissipation substrate. The power device die is connected to the power circuit board through packaging lead wires. In one exemplary embodiment, a heat-dissipation effect and manufacturing efficiency of the RF power amplifier module are improved and a cost of the RF power amplifier module is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.