Patent · US Active

Radiation-emitting semiconductor chip and method of producing radiation-emitting semiconductor chips

US9721940B2 · kind B2 · utility

3Cited by

0References

19Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Andreas Plössl · Regensburg, DE
Heribert Zull · Regensburg, DE

Key dates

Filing date	Aug 29, 2014
Grant date	Aug 1, 2017
Priority date	—
Expiry date	Aug 29, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8506
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.