Thin film transistor device, manufacturing method thereof, and display apparatus
US9721978B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 14, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Aug 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An etch stop layer (ESL) material is formed on an active layer on a substrate. An electrical conductive layer material is formed on the ESL material for forming a source electrode and a drain electrode. The electrical conductive layer material is patterned to form a first portion of the source electrode containing a first via-hole through the source electrode, and to form a first portion of the drain electrode containing a second via-hole through the drain electrode. The ESL material is patterned to form an etch stop layer (ESL) pattern including a first ESL via-hole connecting to the first via-hole through the source electrode and including a second ESL via-hole connecting to the second via-hole through the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.