Image sensors including conductive pixel separation structures and methods of fabricating the same
US9721989B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Nov 11, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC —)General
Abstract
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.