Patent · US Active

Method for manufacturing an insulated gate bipolar transistor

US9722040B2 · kind B2 · utility

0Cited by

1References

17Claims

0Family size

Assignee

ABB Schweiz AG · CH

Inventors

Munaf Rahimo · Uezwil, CH
Maxi Andenna · Fislisbach, CH

Key dates

Filing date	Sep 28, 2015
Grant date	Aug 1, 2017
Priority date	—
Expiry date	Sep 28, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/137

Abstract

Method for manufacturing an insulated gate bipolar transistor, which includes a drift layer of a first conductivity type between an emitter side, at which a gate and emitter electrode are arranged, and a collector side, at which a collector electrode is arranged including steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.