Semiconductor devices and methods of manufacturing the same
US9722068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2014 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.