Methods of manufacturing trench semiconductor devices with edge termination structures
US9722070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | May 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
Embodiments of semiconductor devices and methods of their formation include providing a semiconductor substrate having a top surface, a bottom surface, an active region, and an edge region, and forming a gate structure in a first trench in the active region of the semiconductor substrate. A termination structure is formed in a second trench in the edge region of the semiconductor substrate. The termination structure has an active region facing side and a device perimeter facing side. The method further includes forming first and second source regions of the first conductivity type are formed in the semiconductor substrate adjacent both sides of the gate structure. A third source region is formed in the semiconductor substrate adjacent the active region facing side of the termination structure. The semiconductor device may be a trench metal oxide semiconductor device, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.