Surface passivation for CdTe devices
US9722111B2 · kind B2 · utility
5Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jul 24, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.