Tetradymite layer assisted heteroepitaxial growth and applications

US9722113B2 · kind B2 · utility

Assignee

• THE REGENTS OF THE UNIVERSITY OF MICHIGAN · US

Inventors

• Vladimir Stoica · Farmington Hills, US
• Lynn Endicott · Ann Arbor, US
• Roy Clarke · Ann Arbor, US
• Ctirad Uher · Ann Arbor, US

Key dates

• Filing date: Jul 23, 2015
• Grant date: Aug 1, 2017
• Expiry date: Jul 23, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/541
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.