Patent · US Active

Method for producing an organic field effect transistor and an organic field effect transistor

US9722196B2 · kind B2 · utility

1Cited by

0References

10Claims

0Family size

Assignee

Novaled GmbH · DE

Inventors

Alexander Zakhidov · Austin, US
Bjoern Luessem · Dresden, DE
Karl Leo · Dresden, DE
Hans Kleemann · Dresden, DE

Key dates

Filing date	Mar 28, 2013
Grant date	Aug 1, 2017
Priority date	—
Expiry date	Mar 31, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10K85/623
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.