Light-emitting devices using thin film electrode with refractive index optimized capping layer for reduction of plasmonic energy loss
US9722208B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
A light emitting device includes a substrate, a first electrode disposed on the substrate, a light emission layer (EML) disposed on the first electrode, a second electrode disposed on the EML, and a capping layer disposed on the second electrode. A thickness of the second electrode is not more than 50 nm, a refractive index of the capping layer is less than a refractive index of the EML, and the EML and the second electrode are separated by a distance not more than 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.