Patent · US Active

Light-emitting devices using thin film electrode with refractive index optimized capping layer for reduction of plasmonic energy loss

US9722208B2 · kind B2 · utility

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3References
22Claims
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Inventor

Key dates

Filing dateDec 30, 2015
Grant dateAug 1, 2017
Priority date
Expiry dateDec 30, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K2102/351

Abstract

A light emitting device includes a substrate, a first electrode disposed on the substrate, a light emission layer (EML) disposed on the first electrode, a second electrode disposed on the EML, and a capping layer disposed on the second electrode. A thickness of the second electrode is not more than 50 nm, a refractive index of the capping layer is less than a refractive index of the EML, and the EML and the second electrode are separated by a distance not more than 100 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.