Patent · US Active

Semiconductor laser diode

US9722394B2 · kind B2 · utility

6Cited by

8References

12Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christian Lauer · Regensburg, DE
Harald König · Bernhardswald, DE
Uwe Strau; · Bad Abbach, DE
Alexander Bachmann · Ismaning, DE

Key dates

Filing date	Nov 19, 2012
Grant date	Aug 1, 2017
Priority date	—
Expiry date	Nov 19, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/2054
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.