Ultra high performance silicon carbide gate drivers
US9722595B2 · kind B2 · utility
0Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Dec 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/36
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A system includes a SiC semiconductor power device; a power supply board that is configured to provide power to a first gate driver board via a connector; the first gate driver board that is coupled and configured to provide current to the SiC semiconductor power device, wherein the first gate driver board is coupled to the power supply board via the connector, and wherein the first gate driver board is separated from the power supply board; and an interconnect board that is coupled to the first gate driver board, wherein the interconnect board is configured to couple the first gate driver board a second gate driver board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.