Semiconductor device and high side circuit drive method
US9722610B2 · kind B2 · utility
5Cited by
7References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Mar 16, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Aspects of the invention can include a pulse generating means that outputs a set signal and reset signal for driving the high potential side switching element is such that, while either one of the set signal or reset signal is in an on-state as a main pulse signal for putting the high potential side switching element into a conductive state or non-conductive state, the other signal is turned on a certain time after the rise of the main pulse signal, thereby generating a condition in which the set signal and reset signal are both in an on-state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.