Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
US9725822B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.