Method for depositing one or more polycrystalline silicon layers on substrate
US9728452B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
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Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Mar 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing one or more polycrystalline silicon layers (230c) on a substrate (210) by a chemical vapor deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.