Semiconductor structure and methods
US9728470B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2016 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a method for evaluating a surface of a semiconductor substrate includes directing an incident light beam having multiple wavelengths at a position of a layer having a surface profile configured to form an optical diffraction grating, the layer including a Group III nitride, detecting a reflected beam, reflected from the position, and obtaining a spectrum of reflected intensity as a function of wavelength, the spectrum being representative of the surface profile of the position of the layer from which the beam is reflected, comparing the spectrum obtained from the detected beam with one or more reference spectra stored in memory, and estimating at least one parameter of the surface profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.