Semiconductor device and method for manufacturing the same
US9728513B2 · kind B2 · utility
2Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2012 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Feb 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fuse pattern disposed over a semiconductor substrate, an epoxy mold compound (EMC) layer disposed over the fuse pattern, a first package substrate disposed over the EMC layer, an insulating film disposed over the first package substrate, and a second package substrate disposed over the insulating film. To the first package substrate, a Vss voltage or a negative voltage lower than the Vss voltage is applied to prevent impurities from migrating to the fuse pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.