Manufacturing method and apparatus of low temperature polycrystalline silicon, and polycrystalline silicon
US9728562B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2016 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.