Silicon carbide semiconductor device and method for manufacturing same
US9728628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide epitaxial layer includes: a first impurity region; a second impurity region; and a third impurity region. A gate insulating film is in contact with the first impurity region, the second impurity region, and the third impurity region. A groove portion is formed in a surface of the first impurity region, the surface being in contact with the gate insulating film, the groove portion extending in one direction along the surface, a width of the groove portion in the one direction being twice or more as large as a width of the groove portion in a direction perpendicular to the one direction, a maximum depth of the groove portion from the surface being not more than 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.