Semiconductor device including field effect transistors
US9728644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.