Organic thin film transistor and manufacturing method thereof, array substrate

US9728723B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Yingtao Xie · Beijing, CN
• Shihong Ouyang · Lo Wu, CN
• Shucheng Cai · Beijing, CN
• Qiang Shi · Suzhou, CN
• Ze Liu · Beijing, CN
• Honhang Fong · Beijing, CN

Key dates

• Filing date: Jul 15, 2015
• Grant date: Aug 8, 2017
• Expiry date: Jul 15, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/484

Abstract

An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.