Optical semiconductor device, optical semiconductor device array, and optical transmitter module
US9728938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device includes: an active region which includes an active layer which produces light when current is injected therein, a first diffraction grating layer having a first diffraction grating with a prescribed grating period, and a phase shift portion formed within the first diffraction grating layer, wherein the phase shift portion provides a phase shift not smaller than 1.5π but not larger than 1.83π; and a distributed reflection mirror region which is optically coupled to a first end of the active region as viewed along a direction of an optical axis, and which includes a second diffraction grating which reflects the light produced by the active region back into the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.