Model for accurate photoresist profile prediction
US9733576B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Mar 20, 2014 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Mar 20, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist modelling system includes a mathematical model for a photolithography process. The mathematical model may be executable using a computer processor. The mathematical model may be used to model a photoresist as formed on a semiconductor wafer surface. A blocked polymer concentration gradient equation may be implemented into the mathematical model. The blocked polymer concentration gradient equation may describe an initial concentration gradient of a blocked polymer in the photoresist being modelled by the mathematical model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.