Use of surfactants to control island size and density
US9735008B2 · kind B2 · utility
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Key dates
| Filing date | Oct 25, 2013 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Mar 8, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.