Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device
US9735233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.