Structure and formation method of semiconductor device structure
US9735267B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 28, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Jan 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/025
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure at least partially in a semiconductor substrate. The semiconductor device structure also includes a channel structure over the semiconductor substrate. The source structure is partially covered by the channel structure. The semiconductor device structure further includes a drain structure covering the channel structure. The drain structure and the source structure have different conductivity types. A portion of the channel structure is sandwiched between the source structure and the drain structure. In addition, the semiconductor device structure includes a gate stack partially covering the channel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.