Method for preparing light absorption layer of copper-indium-gallium-sulfur-selenium thin film solar cells
US9735297B2 · kind B2 · utility
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Key dates
| Filing date | Jun 29, 2010 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained.
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