Magneto-resistance random access memory device and method of manufacturing the same
US9735351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.