VCSEL structure with embedded heat sink
US9735539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Jan 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/026
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.