Patent · US Active

VCSEL structure with embedded heat sink

US9735539B2 · kind B2 · utility

6Cited by
23References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 31, 2016
Grant dateAug 15, 2017
Priority date
Expiry dateJan 31, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/026
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.