Image sensor pixel having multiple sensing node gains
US9736411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Oct 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.