Apparatus of high frequency plasma
US9741541B1 · kind B1 · utility
0Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high frequency plasma apparatus includes a reaction chamber, a first electrode, a second electrode, and a plurality of feed points located at one of the two electrodes at least. The feed points are used to simultaneously generate a first standing wave and a second standing wave, with different temporal and spatial patterns. By adjusting amplitudes of the two standing waves and the temporal and spatial phase differences between the two standing waves appropriately, plasma uniformity of the high frequency plasma apparatus can be effectively improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.