Method for forming polysilicon film
US9741562B2 · kind B2 · utility
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10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2015 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jan 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.