Method of manufacturing thin-film transistor substrate
US9741588B2 · kind B2 · utility
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3References
2Claims
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Key dates
| Filing date | Dec 23, 2014 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Dec 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor includes: forming a planarization layer comprising polyimide material above the thin-film transistor; and heating the thin-film transistor at a temperature of 240° C. or lower after the planarization layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.