Devices and methods related to radio-frequency switches having reduced-resistance metal layout
US9741653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices and methods related to radio-frequency (RF) switches having reduced-resistance metal layout. In some embodiments, a field-effect transistor (FET) based RF switch device can include a plurality of fingers arranged in an interleaved configuration such that a first group of the fingers are electrically connected to a source contact and a second group of the fingers are electrically connected to a drain contact. At least some of the fingers can have a current carrying capacity that varies as a function of location along a direction in which the fingers extend. Such a configuration of the fingers can desirably reduce the on-resistance (Ron) of the FET based RF switch device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.