Thin film transistor, pixel structure, and method for manufacturing the same, array substrate and display device
US9741750B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2015 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Sep 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor, a pixel structure, an array substrate, a display device, a method for manufacturing a thin film transistor, and a method for manufacturing a pixel structure are disclosed. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, wherein a first passivation layer made from an aluminum oxide material is provided on the source electrode and the drain electrode, and an active layer made from an aluminum oxide material doped with ions is provided in a region of the first passivation layer corresponding to the gate electrode. Since the first passivation layer as insulation material is doped with the ions to form an active layer, the etching stop layer may be omitted, thereby simplifying the structure of the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.