Charge transfer circuit with storage nodes in image sensors
US9741754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2013 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Feb 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.