Physical layout and structure of RGBZ pixel cell unit for RGBZ image sensor
US9741755B2 · kind B2 · utility
8Cited by
16References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Feb 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N23/57
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.