Bidirectional insulated gate bipolar transistor

US9741837B2 · kind B2 · utility

Assignees

• University of Electronic Science and Technology of China · CN
• INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC · CN

Inventors

• Jinping Zhang · Grand Blanc, US
• Yadong Shan · Chengdu, CN
• Gaochao Xu · Chengdu, CN
• Xin Yao · Beijing, CN
• Jingxiu Liu · Beijing, CN
• Zehong Li · Chengdu, CN
• Min Ren · Nanhu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jul 13, 2016
• Grant date: Aug 22, 2017
• Expiry date: Jul 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.