Integrated circuits resistant to electrostatic discharge and methods for producing the same

US9741849B1 · kind B1 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Chien-Hsin Lee · Malta, US
• Mahadeva Iyer Natarajan · Clifton Park, US
• Xiangxiang Lu · Singapore, SG
• Tsung-Che Tsai · Hsinchu, TW
• Manjunatha Prabhu · Malta, US

Key dates

• Filing date: Apr 8, 2016
• Grant date: Aug 22, 2017
• Expiry date: Apr 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a heavily doped source area having conductivity determining impurities at a heavily doped source concentration and a lightly doped drain area having conductivity determining impurities at a lightly doped drain concentration less than the heavily doped source concentration. A drain conductor directly contacts the lightly doped drain area, and a channel is positioned between the heavily doped source area and the lightly doped drain area. A gate overlies the channel.