SPAD photodiode covered with a network

US9741879B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Frey · Fontaine, FR
• Norbert Moussy · Grenoble, FR

Key dates

• Filing date: Jun 10, 2016
• Grant date: Aug 22, 2017
• Expiry date: Jun 10, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/121

Abstract

The invention relates to a single-photon avalanche diode (SPAD) photodiode having a layer made of semiconductor material, including an N doped zone and a P doped zone separated by an avalanche zone. The semiconductor material layer is intercalated between a periodic structure and a low index layer having a refractive index less than that of the semiconductor material layer and less than that of the periodic structure. The periodic structure is deposited directly on the semiconductor material layer. The photodiode provides low temporal dispersion and high quantum efficiency, without requiring a strong charge acceleration voltage.