Two-terminal electronic devices and their methods of fabrication

US9741901B2 · kind B2 · utility

Assignee

• CBRITE INC. · US

Inventors

• Gang Yu · Lompoc, US
• Chan-Long Shieh · Paradise Valley, US
• Zhao Chen · Tuji, CN

Key dates

• Filing date: Jul 23, 2014
• Grant date: Aug 22, 2017
• Expiry date: Jul 23, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.