Patent · US Active

Optoelectronic semiconductor chip

US9741902B2 · kind B2 · utility

0Cited by
6References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 17, 2016
Grant dateAug 22, 2017
Priority date
Expiry dateMay 17, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.