Optoelectronic semiconductor chip
US9741902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | May 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.