Nano-scale superconducting quantum interference device and manufacturing method thereof

US9741919B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Lei Chen · Chengdu, CN
• Zhen Wang · Shanghai, CN

Key dates

• Filing date: Apr 8, 2014
• Grant date: Aug 22, 2017
• Expiry date: Apr 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N60/0912

Abstract

A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.