High power radio frequency amplifier architecture
US9742445B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jul 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and Ka-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.