Patent · US Active

Method for forming thin film conductors on a substrate

US9743516B2 · kind B2 · utility

0Cited by
3References
14Claims
0Family size

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Key dates

Filing dateDec 3, 2012
Grant dateAug 22, 2017
Priority date
Expiry dateJul 26, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2203/1492
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A method for forming thin film conductors is disclosed. A thin film precursor material is initially deposited onto a porous substrate. The thin film precursor material is then irradiated with a light pulse in order to transform the thin film precursor material to a thin film such that the thin film is more electrically conductive than the thin film precursor material. Finally, compressive stress is applied to the thin film and the porous substrate to further increase the thin film's electrical conductivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.