Method for controlling a plasma chamber
US9745660B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 4, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Sep 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An system and method for controlling a plasma chamber includes operably coupling an RF generator to the plasma chamber, the RF generator providing an RF signal to a chamber input of the plasma chamber; measuring a parameter at the chamber input; determining a rate of change based on the measured parameter; detecting an excessive rate of change condition comprising the rate of change exceeding a reference rate of change; detecting a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; upon detection of the repetitive change condition, decreasing a power of the RF signal provided to the chamber input.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.