Methods of preparation of semiconductor nanocrystals group IIIA and group VA elements

US9748096B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Charles W. Hamilton · Colonia, US
• Justin W. Kamplain · Bartlesville, US
• Catherine Mauck · Chicago, US
• Whitney Miller · Eden Prairie, US
• Jonathan S. Steckel · Saratoga, US
• Chunming Wang · Nanhu, CN
• Zhiming Wang · Sichuan, CN

Key dates

• Filing date: Nov 15, 2014
• Grant date: Aug 29, 2017
• Expiry date: Nov 15, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/932
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.