Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor
US9748097B2 · kind B2 · utility
3Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Mar 26, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Mar 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.