Thin film transistor, method for fabricating the same, and array substrate
US9748284B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 14, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a thin film transistor, a method for fabricating the same and an array substrate. The thin film transistor comprises a base substrate and an active region and a plurality of reflective plates formed on the base substrate, wherein the plurality of reflective plates are spaced apart from each other and provided at least at positions corresponding to the active region, the active region comprises polysilicon, and the polysilicon in the active region is formed by irradiating an amorphous silicon layer with laser emitted from a side of the amorphous silicon layer away from the reflective plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.